郭家俊

郭家俊,讲师,硕士生导师。2018年于河北师范大学获博士学位,2018年至2021年在山东大学从事博士后研究工作。研究方向为二维材料的电输运,阻变存储器,类脑计算器件。

 

邮箱:guojiajun@lcu.edu.cn

 

每年招收硕士研究生1-2名。

 

代表性论文:

  • Guoru Li, Ragini Singh, Jiajun Guo, Bingyuan Zhang, and Santosh Kumar. Nb2CTx MXene-assisted double S-tapered fiber-based LSPR sensor with improved features for tyramine detection. Applied Physics Letters, 122, 083701 (2023).
  • Xiaomin Liu, Shuxia Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jinjin Zhao. Flexible Transparent High-Efficiency Photoelectric Perovskite Resistive Switching Memory. Advanced Functional Materials, 32, 202202951 (2022). 被选为当期封底文章
  • Lifu Liu, Yuan Wang, Wei Chen, Shuxia Ren, Jiajun Guo, Xin Kang, Xu Zhao. Robust resistive switching in MoS2-based memristor with Ti top electrode. Applied Surface Science, 605, 154698 (2022).
  • Ledong Wang, Yue Zhao, Qi Zhang, Jianshu Xue, Jiajun Guo, Yanxue Chen, Yufeng Tian, Shishen Yan, Lihui Bai, and Michael Harder. Néel vector driven spin current in a van der Waals antiferromagnetic insulator (CrCl3)/heavy metal (Pt) bilayer. Physical Review B, 106, 024422 (2022).
  • Liqian Wu, Lizhe Liu, Jiajun Guo, Qiang Chen, Dunhui Wang. Orbital Hybridization Induced by Double-Anion Coordination to Enhance Room-Temperature Ferromagnetic Response. Physica Status Solidi-Rapid Research Letters, 16, 2100553 (2022).
  • Jiajun Guo, Xiaonan Zhao, Zhijian Lu, Peng Shi, Yufeng Tian, Yanxue Chen, Shishen Yan, Lihui Bai, and Michael Harder. High exchange-bias blocking temperature in an ultrathin amorphous antiferromagnet system. Physical Review B, 104, L100401 (2021).
  • Jiajun Guo, Xiaonan Zhao, Zhijian Lu, Peng Shi, Yufeng Tian, Yanxue Chen, Shishen Yan, Lihui Bai, and Michael Harder. Evidence for linear dependence of exchange bias on pinned uncompensated spins in an Fe/FeO bilayer. Physical Review B, 103, 054413 (2021).
  • Qi Zhang, Jianshu Xue, Yitong Sun, Jiajun Guo, Yanxue Chen, Yufeng Tian, Shishen Yan, and Lihui Bai. Coupling of microwave photons to optical and acoustic magnon modes in the layered antiferromagnetic insulator CrCl3. Physical Review B, 104. 094303 (2021).
  • Qi Zhang, Yitong Sun, Zhijian Lu, Jiajun Guo, Jianshu Xue, Yanxue Chen, Yufeng Tian, Shishen Yan, Lihui Bai. Zero-field magnon–photon coupling in antiferromagnet CrCl3. Applied Physics Letters, 119, 102402 (2021).
  • Zhijian Lu, Xinlin Mi, Qi Zhang, Yitong Sun, Jiajun Guo, Yufeng Tian, Shishen Yan, Lihui Bai. Interference induced microwave transmission in the YIG-microstrip cavity system. Journal of Magnetism and Magnetic Materials, 540, 168457 (2021).
  • Liqian Wu, Jiajun Guo (共同一作), Wei Zhong, Wenjun Zhang, Xin Kang, Wei Chen, and Youwei Du. Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid. Applied Surface Science, 463, 947–952 (2019).
  • Xin Kang, Jiajun Guo, Yingjie Gao, Shuxia Ren, Wei Chen, Xu Zhao. NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment. Applied Surface Science, 480, 57-62 (2019).
  • Jiajun Guo, Xin Kang, Yingjie Gao, Wei Chen, Xu Zhao. Enhanced magnetic modulation in HfO2-based resistive memory with an Hf top electrode. Applied Physics Letters, 113, 043502 (2018).
  • Jiajun Guo, Shuxia Ren, Liqian Wu, Xin Kang, Wei Chen, Xu Zhao. Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface. Applied Surface Science, 434, 1074–1078 (2018).
  • 郭家俊, 董静雨, 康鑫, 陈伟, 赵旭. 过渡金属元素X (X = Mn, Fe, Co, Ni) 掺杂对ZnO 基阻变存储器性能的影响. 物理学报, 67, 063101 (2018).
  • Jiajun Guo, Liqian Wu, Shuxia Ren, Xin Kang, Wei Chen, and Xu Zhao. Ultra-low voltage control of magnetic properties in amorphous MgO. Applied Physics Letters, 111, 192402 (2017).
  • Shuxia Ren, Wei Chen, Jiajun Guo, Huifang Yang, Xu Zhao. Enhancement of electrically controlled ferromagnetism in metal-oxide films through magnetic transition metal doping. Journal of Alloys and Compounds, 708, 484-488 (2017).
  • Shuxia Ren, Jiajun Guo, Li Zhang, Xu Zhao, Wei Chen. Quantum conductance and magnetic properties in ZnO based resistive switching memory. Journal of Alloys and Compounds, 689, 800-804 (2016).
  • Shuxia Ren, Jingyu Dong, Wei Chen, Liyong Zhang, Jiajun Guo, Li Zhang, Jing Zhao, and Xu Zhao, Study on the Oxygen Vacancy Redistribution and the Mechanism of Electrical Manipulation of Ferromagnetism in Diluted Magnetic Oxides, Journal of Applied Physics, 118, 233902 (2015).
  • Shuxia Ren, Liyong Zhang, Jingyu Dong, Yanfang Huang, Jiajun Guo, Li Zhang, Jing Zhao, Xu Zhao, and Wei Chen. Electric Field Control of Magnetism in Ti/ZnO/Pt and Ti/ZnO/SRO Devices. Journal of Materials Chemistry C, 3, 4077-4080 (2015).